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IRF4905LPBF датащит (Datasheet) 1 Page - International Rectifier

№ деталь IRF4905LPBF
подробность  HEXFET Power MOSFET
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
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8/5/05
www.irf.com
1
PD - 97034
HEXFET® Power MOSFET
Features of this design are a 150°C junction oper-
ating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of other
applications.
Description
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Some Parameters Are Differrent from
IRF4905S
Lead-Free
Features
IRF4905SPbF
IRF4905LPbF
VDSS = -55V
RDS(on) = 20mΩ
ID = -42A
D2Pak
IRF4905SPbF
TO-262
IRF4905LPbF
S
D
G
D
S
D
G
D
GD
S
Gate
Drain
Source
S
D
G
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
™
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited) Single Pulse Avalanche Energyd
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
Ù
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
i
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.75
RθJA
Junction-to-Ambient (PCB Mount, steady state)
ij
–––
40
-55 to + 150
300 (1.6mm from case )
10 lbf
yin (1.1Nym)
170
1.3
± 20
Max.
-70
-44
-280
-42
790
140
See Fig.12a, 12b, 15, 16




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