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IRF7103PBF датащи(PDF) 2 Page - International Rectifier

номер детали IRF7103PBF
подробное описание детали  HEXFET Power MOSFET
Download  9 Pages
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF7103PBF датащи(HTML) 2 Page - International Rectifier

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IRF7103PbF
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
50
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.049 –––
V/°C Reference to 25°C, ID = 1mA
––– 0.11 0.13
VGS = 10V, ID = 3.0A ƒ
––– 0.16 0.20
VGS = 4.5V, ID = 1.5A ƒ
VGS(th)
Gate Threshold Voltage
1.0 ––– 3.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
––– 3.8 –––
S
VDS = 15V, ID = 3.0A ƒ
––– ––– 2.0
VDS = 40V, VGS = 0V
––– –––
25
VDS = 40V, VGS = 0V, TJ = 55 °C
Gate-to-Source Forward Leakage
––– ––– 100
VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = - 20V
Qg
Total Gate Charge
–––
12
30
ID = 2.0A
Qgs
Gate-to-Source Charge
––– 1.2 –––
nC
VDS = 25V
Qgd
Gate-to-Drain ("Miller") Charge
––– 3.5 –––
VGS = 10V ƒ
td(on)
Turn-On Delay Time
––– 9.0
20
VDD = 25V
tr
Rise Time
––– 8.0
20
ID = 1.0A
td(off)
Turn-Off Delay Time
–––
45
70
RG = 6.0Ω
tf
Fall Time
–––
25
50
RD = 25Ω ƒ
Between lead,6mm(0.25in.)
from package and center
of die contact
Ciss
Input Capacitance
––– 290 –––
VGS = 0V
Coss
Output Capacitance
––– 140 –––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
37
–––
ƒ = 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode) 
p-n junction diode.
VSD
Diode Forward Voltage
––– ––– 1.2
V
TJ = 25°C, IS = 1.5A, VGS = 0V ƒ
trr
Reverse Recovery Time
–––
70
100
ns
TJ = 25°C, IF = 1.5A
Qrr
Reverse RecoveryCharge
––– 110 170
nC
di/dt = 100A/µs ƒ
ton
Forward Turn-On Time
Source-Drain Ratings and Characteristics
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
––– –––
12
––– –––
2.0
A
S
D
G
IGSS
IDSS
Drain-to-Source Leakage Current
LS
Internal Source Inductance
––– 6.0
–––
LD
Internal Drain Inductance
––– 4.0
–––
nH
ns
nA
µA
RDS(ON)
Static Drain-to-Source On-Resistance
S
D
G
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ ISD ≤ 1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 10sec.


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