поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

AM29DS320GB70EEN датащи(PDF) 10 Page - SPANSION

номер детали AM29DS320GB70EEN
подробное описание детали  32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
Download  54 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  SPANSION [SPANSION]
домашняя страница  http://www.spansion.com
Logo SPANSION - SPANSION

AM29DS320GB70EEN датащи(HTML) 10 Page - SPANSION

Back Button AM29DS320GB70EEN Datasheet HTML 6Page - SPANSION AM29DS320GB70EEN Datasheet HTML 7Page - SPANSION AM29DS320GB70EEN Datasheet HTML 8Page - SPANSION AM29DS320GB70EEN Datasheet HTML 9Page - SPANSION AM29DS320GB70EEN Datasheet HTML 10Page - SPANSION AM29DS320GB70EEN Datasheet HTML 11Page - SPANSION AM29DS320GB70EEN Datasheet HTML 12Page - SPANSION AM29DS320GB70EEN Datasheet HTML 13Page - SPANSION AM29DS320GB70EEN Datasheet HTML 14Page - SPANSION Next Button
Zoom Inzoom in Zoom Outzoom out
 10 / 54 page
background image
January 27, 2003
Am29DS320G
9
AD VA NCE
I N FO RM ATI O N
addresses on the device address inputs produce valid
data on the device data outputs. Each bank remains
enabled for read access until the command register
contents are altered.
See “Requirements for Reading Array Data” for more
information. Refer to the AC Read-Only Operations
table for timing specifications and to Figure 14 for the
timing diagram. I
CC1 in the DC Characteristics table
represents the active current specification for reading
array data.
Writing Commands/Command Sequences
To write a command or command sequence (which in-
cludes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to V
IL, and OE# to VIH.
For program operations, the BYTE# pin determines
whether the device accepts program data in bytes or
words. Refer to “Word/Byte Configuration” for more in-
formation.
The device features an Unlock Bypass mode to facil-
itate faster programming. Once a bank enters the Un-
lock Bypass mode, only two write cycles are required
to program a word or byte, instead of four. The
“Word/Byte Configuration” section has details on pro-
gramming data to the device using both standard and
Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sec-
tors, or the entire device. Table 2 indicates the address
space that each sector occupies. The device address
space is divided into two banks: Bank 1 contains the
boot/parameter sectors, and Bank 2 contains the
larger, code sectors of uniform size. A “bank address”
is the address bits required to uniquely select a bank.
Similarly, a “sector address” is the address bits re-
quired to uniquely select a sector.
I
CC2 in the DC Characteristics table represents the ac-
tive current specification for the write mode. The AC
Characteristics section contains timing specification
tables and timing diagrams for write operations.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. This is one of two functions
provided by the WP#/ACC pin. This function is prima-
rily intended to allow faster manufacturing throughput
at the factory.
If the system asserts V
HH on this pin, the device auto-
matically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the
time required for program operations. The system
would use a two-cycle program command sequence
as required by the Unlock Bypass mode. Removing
V
HH from the WP#/ACC pin returns the device to nor-
mal operation. Note that the WP#/ACC pin must not
be at V
HH for operations other than accelerated pro-
gramming, or device damage may result. In addition,
the WP#/ACC pin must not be left floating or uncon-
nected; inconsistent behavior of the device may result.
Autoselect Functions
If the system writes the autoselect command se-
quence, the device enters the autoselect mode. The
system can then read autoselect codes from the inter-
nal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in
this mode. Refer to the Autoselect Mode and Autose-
lect Command Sequence sections for more informa-
tion.
Simultaneous Read/Write Operations
with Zero Latency
This device is capable of reading data from one bank
of memory while programming or erasing in the other
bank of memory. An erase operation may also be sus-
pended to read from or program to another location
within the same b ank (except the sector bein g
erased). Figure 21 shows how read and write cycles
may be initiated for simultaneous operation with zero
latency. I
CC6 and ICC7 in the DC Characteristics table
represent the current specifications for read-while-pro-
gram and read-while-erase, respectively.
Standby Mode
When the system is not reading or writing to the de-
vice, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at V
CC ± 0.3 V.
(Note that this is a more restricted voltage range than
V
IH.) If CE# and RESET# are held at VIH, but not within
V
CC ± 0.3 V, the device will be in the standby mode,
but the standby current will be greater. The device re-
quires standard access time (t
CE) for read access
when the device is in either of these standby modes,
before it is ready to read data.
If the device is deselected during erasure or program-
ming, the device draws active curren t until the
operation is completed.
I
CC3 in the DC Characteristics table represents the
standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device en-
ergy consumption. The device automatically enables


Аналогичный номер детали - AM29DS320GB70EEN

производительномер деталидатащиподробное описание детали
logo
SPANSION
AM29DS322B120EE SPANSION-AM29DS322B120EE Datasheet
1,003Kb / 52P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS322B120EEN SPANSION-AM29DS322B120EEN Datasheet
1,003Kb / 52P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS322B120EI SPANSION-AM29DS322B120EI Datasheet
1,003Kb / 52P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS322B120EIN SPANSION-AM29DS322B120EIN Datasheet
1,003Kb / 52P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS322B120WMI SPANSION-AM29DS322B120WMI Datasheet
1,003Kb / 52P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
More results

Аналогичное описание - AM29DS320GB70EEN

производительномер деталидатащиподробное описание детали
logo
SPANSION
AM29DS32XG SPANSION-AM29DS32XG Datasheet
1,003Kb / 52P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
logo
Advanced Micro Devices
AM29DS323D AMD-AM29DS323D Datasheet
1,013Kb / 54P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS323D AMD-AM29DS323D_06 Datasheet
1Mb / 56P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DL322C AMD-AM29DL322C Datasheet
691Kb / 52P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322D AMD-AM29DL322D Datasheet
1Mb / 54P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
logo
SPANSION
AM29DL32XG SPANSION-AM29DL32XG_06 Datasheet
1Mb / 58P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
logo
Advanced Micro Devices
AM29DL320G AMD-AM29DL320G Datasheet
1Mb / 58P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL32XG AMD-AM29DL32XG Datasheet
1,019Kb / 58P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322D AMD-AM29DL322D_05 Datasheet
1Mb / 56P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL16XD AMD-AM29DL16XD_06 Datasheet
1Mb / 57P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com