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2N4125 датащи(PDF) 1 Page - Fairchild Semiconductor |
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2N4125 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page PNP General Purpose Amplifier 2N4125 This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 µA to 100 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units 2N4125 PD Total Device Dissipation Derate above 25 °C 625 5.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W C B E TO-92 © 2001 Fairchild Semiconductor Corporation 2N4125, Rev A |
Аналогичный номер детали - 2N4125 |
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Аналогичное описание - 2N4125 |
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