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IRF820ASPBF датащи(PDF) 2 Page - International Rectifier

номер детали IRF820ASPBF
подробное описание детали  HEXFET Power MOSFET
Download  10 Pages
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF820ASPBF датащи(HTML) 2 Page - International Rectifier

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IRF820AS/LPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
1.4
–––
–––
S
VDS = 50V, ID = 1.5A
†
Qg
Total Gate Charge
–––
–––
17
ID = 2.5A
Qgs
Gate-to-Source Charge
–––
–––
4.3
nC
VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
8.5
VGS = 10V, See Fig. 6 and 13
„†
td(on)
Turn-On Delay Time
–––
8.1
–––
VDD = 250V
tr
Rise Time
–––
12
–––
ID = 2.5A
td(off)
Turn-Off Delay Time
–––
16
–––
RG = 21Ω
tf
Fall Time
–––
13
–––
RD = 97Ω,See Fig. 10
„†
Ciss
Input Capacitance
–––
340
–––
VGS = 0V
Coss
Output Capacitance
–––
53
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
2.7
–––
pF
ƒ = 1.0MHz, See Fig. 5
†
Coss
Output Capacitance
–––
490
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
15
–––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
28
–––
VGS = 0V, VDS = 0V to 400V
…†
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚†
–––
140
mJ
IAR
Avalanche Current

–––
2.5
A
EAR
Repetitive Avalanche Energy

–––
5.0
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
†
–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.6
V
TJ = 25°C, IS = 2.5A, VGS = 0V
„
trr
Reverse Recovery Time
–––
330 500
ns
TJ = 25°C, IF = 2.5A
Qrr
Reverse RecoveryCharge
–––
760 1140
nC
di/dt = 100A/µs
„†
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
2.5
10
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
500
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.60
–––
V/°C Reference to 25°C, ID = 1mA
†
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
3.0
VGS = 10V, ID = 1.5A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.5
V
VDS = VGS, ID = 250µA
–––
–––
25
µA
VDS = 500V, VGS = 0V
–––
–––
250
VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
––– -100
nA
VGS = -30V
IGSS
IDSS
Drain-to-Source Leakage Current
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
2.5
°C/W
RθJA
Junction-to-Ambient ( PCB Mounted, steady-state)*
–––
62
Thermal Resistance


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