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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7104PBF датащи(PDF) 2 Page - International Rectifier |
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IRF7104PBF датащи(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF7104PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient -0.015 V/°C Reference to 25°C, ID = -1mA 0.19 0.25 VGS = -10V, ID = -1.0A 0.30 0.40 VGS = -4.5V, ID = -0.50A VGS(th) Gate Threshold Voltage -1.0 -3.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 2.5 S VDS = -15V, ID = -2.3A -2.0 VDS = -16V, VGS = 0V -25 VDS = -16V, VGS = 0V, TJ = 55 °C Gate-to-Source Forward Leakage -100 VGS = -12V Gate-to-Source Reverse Leakage 100 VGS = 12V Qg Total Gate Charge 9.3 25 ID = -2.3A Qgs Gate-to-Source Charge 1.6 nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge 3.0 VGS = -10V td(on) Turn-On Delay Time 12 40 VDD = -10V tr Rise Time 16 40 ID = -1.0A td(off) Turn-Off Delay Time 42 90 RG = 6.0Ω tf Fall Time 30 50 RD = 10Ω Between lead,6mm(0.25in.) from package and center of die contact Ciss Input Capacitance 290 VGS = 0V Coss Output Capacitance 210 pF VDS = -15V Crss Reverse Transfer Capacitance 67 = 1.0MHz Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage -1.2 V TJ = 25°C, IS = -1.25A, VGS = 0V trr Reverse Recovery Time 69 100 ns TJ = 25°C, IF = -1.25A Qrr Reverse RecoveryCharge 90 140 nC di/dt = 100A/µs ton Forward Turn-On Time Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) -9.2 -2.0 A IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance 6.0 LD Internal Drain Inductance 4.0 nH ns nA µA Ω RDS(ON) Static Drain-to-Source On-Resistance Notes: Repetitive rating; pulse width limited by max. junction temperature. I SD ≤ -2.3A, di/dt ≤ 100A/µs, V DD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec. S D G S D G |
Аналогичный номер детали - IRF7104PBF |
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Аналогичное описание - IRF7104PBF |
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