Parameter

Typ.

Max.

Units

Junction-to-Case

–––

2.0

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

40

IRL5602SPbF

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device

design that HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for use in a wide variety

of applications.

sizes up to HEX-4. It provides the highest power capability and the lowest

suitable for high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface mount application.

Parameter

Max.

Units

-24

-17

A

Pulsed Drain Current



-96

Power Dissipation

75

W

Linear Derating Factor

0.5

W/°C

Gate-to-Source Voltage

± 8.0

V

Single Pulse Avalanche Energy

‚

290

mJ

Avalanche Current



-12

A

Repetitive Avalanche Energy



7.5

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

-0.81

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

Thermal Resistance

Description

03/10/04

www.irf.com

1

S

D

G

2

D Pak

°C/W

PD- 95099