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FDS3670 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS3670 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page November 2000 2000 Fairchild Semiconductor Corporation FDS3670 Rev C(W) FDS3670 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 6.3 A, 100 V. R DS(ON) = 32 m Ω @ V GS = 10 V RDS(ON) = 35 m Ω @ V GS = 6 V • Low gate charge (57 nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability S D S S SO-8 D D D G 6 7 8 5 3 2 1 4 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 6.3 A – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 PD (Note 1c) 1.0 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS3670 FDS3670 13’’ 12mm 2500 units |
Аналогичный номер детали - FDS3670 |
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Аналогичное описание - FDS3670 |
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