поискавой системы для электроныых деталей |
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FDS4770 датащи(PDF) 4 Page - Fairchild Semiconductor |
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FDS4770 датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page FDS4770 Rev C(W) Typical Characteristics 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 10V 5.5V 5.0V 4.5V 6.0V 0.8 1 1.2 1.4 1.6 1.8 2 0 20 40 60 80 ID, DRAIN CURRENT (A) VGS = 5.0V 10V 6.0V 7.0V 5.5V 8.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( oC) ID = 13.2A V GS = 10V 0.004 0.007 0.01 0.013 0.016 0.019 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) ID = 6.6A T A = 125 oC TA = 25 oC Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 15 30 45 60 75 90 2.5 3.5 4.5 5.5 VGS, GATE TO SOURCE VOLTAGE (V) T A = 125 oC 25 oC -55 oC VDS = 5V 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) V GS = 0V TA = 125 oC 25 oC -55 oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Аналогичный номер детали - FDS4770_04 |
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Аналогичное описание - FDS4770_04 |
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