поискавой системы для электроныых деталей |
|
FDS6375 датащи(PDF) 4 Page - Fairchild Semiconductor |
|
FDS6375 датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDS6375 Rev E(W) Typical Characteristics 0 1 2 3 4 5 0 6 12 18 24 30 Q g, GATE CHARGE (nC) I D = -8A V DS = -5V -10V -15V 0 800 1600 2400 3200 4000 0 5 10 15 20 -V DS , DRAIN TO SOURCE VOLTAGE (V) C ISS C OSS C RSS f = 1 MHz V GS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -V DS , DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 100 µ R DS(ON) LIMIT V GS = -4.5V SINGLE PULSE RθJA = 125 oC/W T A = 25 oC 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) SINGLE PULSE Rθ JA = 125°C/W T A = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 125 o C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1/ t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. |
Аналогичный номер детали - FDS6375_01 |
|
Аналогичное описание - FDS6375_01 |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |