поискавой системы для электроныых деталей |
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FDS6576 датащи(PDF) 4 Page - Fairchild Semiconductor |
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FDS6576 датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDS6576 Rev E3 Typical Characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 Qg, GATE CHARGE (nC) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) ID = 12A VDS = 10V f = 1MHz VGS = 0 V 20V 15V CISS COSS CRSS Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t1, TIME (sec) 100 SINGLE PULSE R JA = 125 /W TA = 25 RDS(ON) LIMIT 10ms 1ms DC 10s 1s 100ms VGS = 10V SINGLE PULSE R JA = 125 oC/W TA = 25 oC Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 100 1000 D = 0.5 R JA(t) = r(t) + R JA R JA = 125 /W TJ - TA = P * R JA(t) Duty Cycle, D = t1 / t2 0.2 0.1 10 P(pk) t1 t2 0.05 SINGLE PULSE 0.01 0.02 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. |
Аналогичный номер детали - FDS6576 |
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Аналогичное описание - FDS6576 |
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