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FDS6576 датащи(PDF) 1 Page - Fairchild Semiconductor

номер детали FDS6576
подробное описание детали  P-Channel 2.5V Specified PowerTrench MOSFET
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6576 датащи(HTML) 1 Page - Fairchild Semiconductor

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2006 Fairchild Semiconductor Corporation
FDS6576 Rev E3
FDS6576
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is in a rugged
gate version of Fairchild Semiconductor's advanced
PowerTrench
®
®
process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V - 12V).
Applications
Load switch
Battery protection
Power management
Features
–11 A, –20 V. R
DS(ON) = 0.014
@ V
GS = –4.5 V
R
DS(ON) = 0.020
@ V
GS = –2.5 V
Extended V
GSS range (
12V) for battery applications.
Low gate charge (43nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON).
High power and current handling capability.
RoHS Compliant.
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
Gate-Source Voltage
12
V
ID
Drain Current
– Continuous
(Note 1a)
–11
A
– Pulsed
–50
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
PD
(Note 1c)
1.0
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
C
Thermal Characteristics
R JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
C/W
R JA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
C/W
R JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6576
FDS6576
13’’
12mm
2500 units
tm
December 2006


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