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FDS6675 датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDS6675
подробное описание детали  Single P-Channel, Logic Level, PowerTrenchTM MOSFET
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6675 датащи(HTML) 2 Page - Fairchild Semiconductor

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Electrical Characteristics
(T
A = 25
OC unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS = 0 V, I D = -250 µA
-30
V
BV
DSS/TJ
Breakdown Voltage Temp. Coefficient
I
D = -250 µA, Referenced to 25
oC
-22
mV/
oC
I
DSS
Zero Gate Voltage Drain Current
V
DS = -24 V, VGS = 0 V
-1
µA
T
J = 55°C
-10
µA
I
GSSF
Gate - Body Leakage, Forward
V
GS = 20 V, VDS = 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS = -20 V, VDS = 0 V
-100
nA
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS = VGS, ID = -250 µA
-1
-1.7
-3
V
V
GS(th)/TJ
Gate Threshold Voltage Temp. Coefficient
I
D = 250 µA, Referenced to 25
oC
4.3
mV/
oC
R
DS(ON)
Static Drain-Source On-Resistance
V
GS = -10 V, I D = -11 A
0.011
0.014
T
J =125°C
0.016
0.023
V
GS = -4.5 V, I D = -9 A
0.015
0.02
I
D(ON)
On-State Drain Current
V
GS = -10 V, VDS = -5 V
-50
A
g
FS
Forward Transconductance
V
DS = -10 V, I D = -11 A
32
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS = -15 V, VGS = 0 V,
f = 1.0 MHz
3000
pF
C
oss
Output Capacitance
870
pF
C
rss
Reverse Transfer Capacitance
360
pF
SWITCHING CHARACTERISTICS (Note 2)
t
D(on)
Turn - On Delay Time
V
DS = -15 V, I D = -1 A
12
22
ns
t
r
Turn - On Rise Time
V
GEN = -10 V, RGEN = 6
16
27
ns
t
D(off)
Turn - Off Delay Time
50
80
ns
t
f
Turn - Off Fall Time
100
140
ns
Q
g
Total Gate Charge
V
DS = -15 V, I D = -11 A,
30
42
nC
Q
gs
Gate-Source Charge
V
GS = -5 V
9
nC
Q
gd
Gate-Drain Charge
11
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
-2.1
A
V
SD
Drain-Source Diode Forward Voltage
V
GS = 0 V, IS = -2.1 A
(Note 2)
-0.72
-1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is
guaranteed by design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDS6675 Rev.C2
c. 125
OC/W on a 0.006 in2 pad
of 2oz copper.
b. 105
OC/W on a 0.04 in2
pad of 2oz copper.
a. 50
OC/W on a 1 in2 pad
of 2oz copper.


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