поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

FDS6912 датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDS6912
подробное описание детали  Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
Download  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6912 датащи(HTML) 2 Page - Fairchild Semiconductor

  FDS6912 Datasheet HTML 1Page - Fairchild Semiconductor FDS6912 Datasheet HTML 2Page - Fairchild Semiconductor FDS6912 Datasheet HTML 3Page - Fairchild Semiconductor FDS6912 Datasheet HTML 4Page - Fairchild Semiconductor FDS6912 Datasheet HTML 5Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
FDS6912 Rev E (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 250
µA
30
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250
µA, Referenced to 25°C
20
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
TJ = 55
°C
1
10
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 25 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –25 V
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250
µA
12
3
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA, Referenced to 25°C
–5
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
ID = 6 A
TJ = 125
°C
0.024
0.034
0.028
0.048
VGS = 4.5 V,
ID = 4.9 A
0.035
0.042
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
20
A
gFS
Forward Transconductance
VDS = 10 V,
ID = 6 A
20
S
Dynamic Characteristics
Ciss
Input Capacitance
740
pF
Coss
Output Capacitance
170
pF
Crss
Reverse Transfer Capacitance
VDS = 15 V,
V GS = 0 V,
f = 1.0 MHz
75
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
8
16
ns
tr
Turn–On Rise Time
13
24
ns
td(off)
Turn–Off Delay Time
18
29
ns
tf
Turn–Off Fall Time
VDD = 15 V,
ID = 1 A,
VGS = 10 V,
RGEN = 6
816
ns
Qg
Total Gate Charge
7
10
nC
Qgs
Gate–Source Charge
3.8
nC
Qgd
Gate–Drain Charge
VDS = 10 V,
ID = 6 A,
VGS = 5 V
2.5
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.3
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 1.3 A
(Note 2)
0.75
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°/W when
mounted on a 0.5in
2
pad of 2 oz copper
b) 125°/W when
mounted on a 0.02
in
2 pad of 2 oz
copper
c) 135°/W when mounted on a
minimum mounting pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


Аналогичный номер детали - FDS6912

производительномер деталидатащиподробное описание детали
logo
Fairchild Semiconductor
FDS6912 FAIRCHILD-FDS6912 Datasheet
219Kb / 8P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6912A FAIRCHILD-FDS6912A Datasheet
222Kb / 4P
   Dual N-Channel, Logic Level, PowerTrenchTM MOSFET
FDS6912A FAIRCHILD-FDS6912A Datasheet
121Kb / 5P
   Dual N-Channel Logic Level PowerTrench MOSFET
logo
Guangdong Youtai Semico...
FDS6912A UMW-FDS6912A Datasheet
387Kb / 6P
   30V Dual N-Channel MOSFET
logo
Fairchild Semiconductor
FDS6912A FAIRCHILD-FDS6912A_03 Datasheet
121Kb / 5P
   Dual N-Channel Logic Level PowerTrench MOSFET
More results

Аналогичное описание - FDS6912

производительномер деталидатащиподробное описание детали
logo
Fairchild Semiconductor
FDS6812A FAIRCHILD-FDS6812A Datasheet
79Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6898AZ FAIRCHILD-FDS6898AZ_10 Datasheet
332Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6894A FAIRCHILD-FDS6894A Datasheet
82Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6892AZ FAIRCHILD-FDS6892AZ Datasheet
78Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6898AZ_F085 FAIRCHILD-FDS6898AZ_F085 Datasheet
332Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6892A FAIRCHILD-FDS6892A Datasheet
80Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6898A FAIRCHILD-FDS6898A Datasheet
81Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6894AZ FAIRCHILD-FDS6894AZ Datasheet
77Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6898AZ FAIRCHILD-FDS6898AZ Datasheet
77Kb / 5P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6912 FAIRCHILD-FDS6912 Datasheet
219Kb / 8P
   Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
More results


Html Pages

1 2 3 4 5


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com