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FDS8670 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS8670 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page © 2005 Fairchild Semiconductor Corporation FDS8670 Rev C (W) FDS8670 30V N-Channel PowerTrench® MOSFET General Description This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low Rds(on) has been maintained to provide an extremely versatile device. Applications • High Efficiency DC-DC Converters: • Notebook Vcore Power Supply • Telecom Brick Synchronous Rectifier • Multi purpose Point Of Load Features • 21 A, 30 V Max RDS(ON) = 3.7 mΩ @ VGS = 10 V Max RDS(ON) = 5.0 mΩ @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) and gate charge • Minimal Qgd (5.5 nC typical) • 100% RG tested (0.9 Ω typical) • RoHS Compliant S D S S SO-8 D D D G 4 3 2 1 5 6 7 8 Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V Drain Current – Continuous (Note 1a) 21 ID – Pulsed 105 A Power Dissipation (Note 1a) 2.5 (Note 1b) 1.2 PD (Note 1c) 1 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 ° C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 ° C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS8670 FDS8670 13’’ 12mm 2500 units tm August 2006 |
Аналогичный номер детали - FDS8670_06 |
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Аналогичное описание - FDS8670_06 |
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