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FDS8960C_0511 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS8960C_0511 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page November 2005 ©2005 Fairchild Semiconductor Corporation FDS8960C Rev C1(W) www.fairchildsemi.com FDS8960C Dual N & P-Channel PowerTrench ® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • Q1: N-Channel 7.0A, 35V R DS(on) = 0.024Ω @ VGS = 10V R DS(on) = 0.032Ω @ VGS = 4.5V • Q2: P-Channel –5A, –35V R DS(on) = 0.053Ω @ VGS = –10V R DS(on) = 0.087Ω @ VGS = –4.5V • Fast switching speed • RoHS compliant S D S S SO-8 D D D G D1 D1 D2 D2 S1 G1 S2 G2 Pin 1 SO-8 4 3 2 1 5 6 7 8 Q1 Q2 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage 35 –35 V VDS(Avalanche) Drain-Source Avalanche Voltage (maximum) (Note 3) 40 –40 V VGSS Gate-Source Voltage ±20 ±25 V ID Drain Current - Continuous (Note 1a) 7 –5 A - Pulsed 20 –20 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS8960C FDS8960C 13” 12mm 2500 units |
Аналогичный номер детали - FDS8960C_0511 |
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Аналогичное описание - FDS8960C_0511 |
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