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FDS8960C_0511 датащи(PDF) 1 Page - Fairchild Semiconductor

номер детали FDS8960C_0511
подробное описание детали  Dual N & P-Channel PowerTrench짰 MOSFET
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS8960C_0511 датащи(HTML) 1 Page - Fairchild Semiconductor

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November 2005
©2005 Fairchild Semiconductor Corporation
FDS8960C Rev C1(W)
www.fairchildsemi.com
FDS8960C
Dual N & P-Channel PowerTrench
®
MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild
Semiconductor’s
advanced
PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
Q1:
N-Channel
7.0A, 35V
R
DS(on) = 0.024Ω @ VGS = 10V
R
DS(on) = 0.032Ω @ VGS = 4.5V
Q2:
P-Channel
–5A, –35V
R
DS(on) = 0.053Ω @ VGS = –10V
R
DS(on) = 0.087Ω @ VGS = –4.5V
Fast switching speed
RoHS compliant
S
D
S
S
SO-8
D
D
D
G
D1
D1
D2
D2
S1
G1
S2
G2
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol
Parameter
Q1
Q2
Units
VDSS
Drain-Source Voltage
35
–35
V
VDS(Avalanche)
Drain-Source Avalanche Voltage (maximum) (Note 3)
40
–40
V
VGSS
Gate-Source Voltage
±20
±25
V
ID
Drain Current
- Continuous
(Note 1a)
7
–5
A
- Pulsed
20
–20
PD
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS8960C
FDS8960C
13”
12mm
2500 units


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