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FDS9933 датащи(PDF) 4 Page - Fairchild Semiconductor

номер детали FDS9933
подробное описание детали  Dual P-Channel 2.5V Specified PowerTrench MOSFET
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
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FDS9933 датащи(HTML) 4 Page - Fairchild Semiconductor

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FDS9933 Rev C
Typical Characteristics:
0
1
2
3
4
5
0
2
4
6
8
10
Qg, GATE CHARGE (nC)
ID = -5A
VDS = -4V
-8V
-6V
0
400
800
1200
1600
0
4
8
12
16
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Ciss
Coss
Crss
f = 1 MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
DC
1s
100ms
100
µs
RDS(ON) LIMIT
VGS = -4.5V
SINGLE PULSE
RθJA = 135
oC/W
TA = 25
oC
10ms
1ms
10s
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 135
oC/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1
t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.


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