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FDZ291P датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDZ291P
подробное описание детали  P-Channel 1.5 V Specified PowerTrench짰 BGA MOSFET
Download  6 Pages
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDZ291P датащи(HTML) 2 Page - Fairchild Semiconductor

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FDZ291P Rev. C2 (W)
Electrical CharacteristicsT
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = –250 µA
–20
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = –250 µA, Referenced to 25°C
–12
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V,
VGS = 0 V
–1
µA
IGSS
Gate–Body Leakage.
VGS = ±8 V,
VDS = 0 V
±100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = –250 µA
–0.4
–0.7
–1.0
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA, Referenced to 25°C
2
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V, ID = –4.6 A
VGS = –2.5 V, ID = –3.6 A
VGS = –1.5 V, ID = –1.0 A
VGS = –4.5 V, ID = –4.6 A, TJ=125
°C
31
43
85
42
40
60
160
55
m
ID(on)
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
–10
A
gFS
Forward Transconductance
VDS = –5 V,
ID = –4.6 A
16
S
Dynamic Characteristics
Ciss
Input Capacitance
1010
pF
Coss
Output Capacitance
160
pF
Crss
Reverse Transfer Capacitance
VDS = –10 V,
V GS = 0 V,
f = 1.0 MHz
80
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
11
19
ns
tr
Turn–On Rise Time
9
18
ns
td(off)
Turn–Off Delay Time
36
58
ns
tf
Turn–Off Fall Time
VDD = –10 V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6 Ω
16
29
ns
Qg
Total Gate Charge
9
13
nC
Qgs
Gate–Source Charge
1.6
nC
Qgd
Gate–Drain Charge
VDS = –10V,
ID = –4.6 A,
VGS = –4.5 V
1.9
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.4
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0V, IS = –1.4 A
(Note 2)
–0.7
–1.2
V
trr
Diode Reverse Recovery Time
17
ns
Qrr
Diode Reverse Recovery Charge
IF = –4.6 A, dIF/dt = 100A/µs
5
nC
Notes:
1.
RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design.
a)
72°C/W when
mounted on a 1in2 pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b)
157°C/W when mounted
on a minimum pad of 2 oz
copper
2.
Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


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