STP40NF10 datasheet(4/12 Pages) STMICROELECTRONICS

номер детали	STP40NF10

подробное описание детали	N-channel 100V - 0.025??- 50A TO-220 Low gate charge STripFET??II Power MOSFET

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Electrical characteristics

STP40NF10

4/12

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown voltage

ID = 250 µA, VGS = 0

100

V

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = Max rating

1

µA

VDS=Max rating,TC=125°C

10

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ±20V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

2

3

4

V

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 25A

0.025

0.028

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5.

Forward transconductance

VDS = 15V, ID=28A

22

S

Ciss

Input capacitance

VDS = 25V, f = 1 MHz,

VGS = 0

2180

pF

Coss

Output capacitance

298

pF

Crss

Reverse transfer

capacitance

83.7

pF

Qg

Total gate charge

VDD = 80V, ID = 50A,

VGS = 10V

(see Figure 14)

57.6

76

nC

Qgs

Gate-source charge

13.3

nC

Qgd

Gate-drain charge

17.5

nC

Table 5.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on delay time

Rise time

VDD = 50V, ID = 25A

RG =4.7Ω VGS = 10V

(see Figure 13)

21

46

ns

td(off)

tf

Turn-off-delay time

Fall time

VDD = 27V, ID = 40A,

RG =4.7Ω, VGS = 10V

(see Figure 13)

54

13

ns

Аналогичный номер детали - STP40NF10

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STP40NF10	479Kb / 11P	N-CHANNEL 100V - 0.024ohm - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET??II POWER MOSFET
STMicroelectronics	STP40NF10	379Kb / 15P	N-channel 100V - 0.025廓 - 50A TO-220 / DPAK Low gate charge STripFET??II Power MOSFET
VBsemi Electronics Co.,...	STP40NF10	951Kb / 7P	N-Channel 100-V (D-S) MOSFET
Inchange Semiconductor ...	STP40NF10	305Kb / 2P	isc N-ChannelMOSFET Transistor
STMicroelectronics	STP40NF10L	272Kb / 8P	N-CHANNEL 100V - 0.028ohm - 40A TO-220 LOW GATE CHARGE STripFET POWER MOSFET

More results

Аналогичное описание - STP40NF10

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STD40NF10	379Kb / 15P	N-channel 100V - 0.025廓 - 50A TO-220 / DPAK Low gate charge STripFET??II Power MOSFET
	STB40NF10	411Kb / 13P	N-channel 100V - 0.025廓 - 50A - D2PAK Low gate charge STripFET??II Power MOSFET
	STP40NF10	479Kb / 11P	N-CHANNEL 100V - 0.024ohm - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET??II POWER MOSFET
	IRF530	281Kb / 3P	N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET??II POWER MOSFET June 1988
	IRF540	311Kb / 8P	N-CHANNEL 100V - 0.055廓 - 22A TO-220 LOW GATE CHARGE STripFET??II POWER MOSFET
	STP40NF10L	272Kb / 8P	N-CHANNEL 100V - 0.028ohm - 40A TO-220 LOW GATE CHARGE STripFET POWER MOSFET
	STP24NF10	48Kb / 6P	N - CHANNEL 100V - 0.07ohm - 24A TO-220 LOW GATE CHARGE STripFET POWER MOSFET
	STB24NF10	421Kb / 14P	N-channel 100V - 0.0055OHM - 26A - TO-220 - D2PAK Low gate charge STripFET TM II Power MOSFET
	STB35NF10	427Kb / 14P	N-channel 100V - 0.030廓 - 40A - D2PAK/TO-220 Low gate charge STripFET??II Power MOSFET
	STB80NF10	317Kb / 14P	N-channel 100V - 0.012OHM - 80A - TO-220 / D2PAK Low gate charge STRIPFET TM II Power MOSFET

More results

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