Reverse

Voltage: 20 - 100 Volts

Forward Current: 1.0 Amp

CDBHD120L-G Thru 1100L-G

Features

Mechanical Data

SMD DIODE SPECIALIST

COMCHIP

MDS0702004A

Page 1

•

Low Vf Schottky barrier chips in bridge

• Metal-Semiconductor junction with guard ring

• High surge current capability

• Silicon epitaxial planar chips

• For use in low voltage, high efficiency inverters, free

wheeling, and polarity protection applications

• Lead-free part, meet RoHS requirements

• Case: Mini-Dip bridge (TO-269AA) plastic molded case

• Epoxy: UL94-V0 rated flame retardant

• Terminals: Solderable per MIL-STD-750 Method 2026

• Polarity: As marked on body

• Mounting Position: Any

• Weight: 0.0078 ounces, 0.22 grams

Unit :inch(mm)

.008(0.2)

Max.

.106(2.7)

.090(2.3)

.114(2.90)

.094(2.40)

.051(1.3)

.035(0.9)

.193(4.90)

.177(4.50)

.067(1.7)

.057(1.3)

.031(0.8)

.019(0.5)

.016(0.41)

.006(0.15)

+

–

~

~

.043(1.1)

.027(0.7)

.106(2.7)

.090(2.3)

C .02(0.5)

~

+

~

–

Mini-DIP

CDBHD - Symbols 120L

14

0L

16

0L

18

0L

11

00L Units

Maximum Recurrent Peak Reverse Voltage

20

40

60

80

100

Volts

Maximum RMS Voltage

14

28

42

56

70

Volts

Maximum DC Blocking Voltage

20

40

60

80

100

Volts

Maximum Average Forward Rectified Current

Peak Forward Surge Current

8.3mS single half sine-wave superimp osed on

30.0

Amps

rated load (JEDEC Me thod)

Maximum Forward Voltage at 1.0A (Note 1)

0.44

0.625

0.75

Volts

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Typical Junction Capacitance (Note 2)

250

125

pF

Typical Thermal Resistance (Note 3)

85.0

20.0

Operating Junction Temperature Range

-55 ~ +125

°C

Storage Temperature Range

-55 ~ +150

°C

MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified

1.0

Amps

mA

°C/W

0.5

20.0

:

2. Me asured at 1.0MH z an d ap plied reverse vo ltage of 4.0 Volts

3. Therma l resistance from junction to am bient and from junction to lead P.C.B. mo unted on 0. 2x0.2”(5.0x5.0mm ) co pper pa d ar eas.