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BC639 датащи(PDF) 1 Page - Zetex Semiconductors |
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BC639 датащи(HTML) 1 Page - Zetex Semiconductors |
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1 / 1 page NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 SEPT 93 FEATURES * 1 Amp continuous current *Ptot= 800 mW ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5V Continuous Collector Current IC 1A Power Dissipation at Tamb=25°C Ptot 800 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 80 V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 80 V IC=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=10µA, IC=0 Collector Cut-Off Current ICBO 0.1 µ A VCB=30V Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=500mA, IB=50mA* Base-Emitter Turn-on Voltage VBE(on) 1.0 V IC=500mA,VCE=2V* Static Forward Current Transfer Ratio hFE 25 40 25 160 IC=5mA, VCE=2V* IC=150mA, VCE=2V* IC=500mA, VCE=2V* Transition Frequency fT 200 MHz IC=50mA, VCE=2V f=100MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% BC639 3-18 E C B TO92 |
Аналогичный номер детали - BC639 |
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Аналогичное описание - BC639 |
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