1997 Feb 18

4

Philips Semiconductors

Product specification

NPN microwave power transistor

RZ1214B35Y

THERMAL CHARACTERISTICS

Notes

1. See

“Mounting recommendations in the General part of handbook SC19a”.

2. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

APPLICATION INFORMATION

The transistors are 100% tested under the following conditions

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

thermal resistance from junction to mounting-base

5

K/W

thermal resistance from mounting-base to heatsink

note 1

0.2

K/W

thermal resistance from junction to heatsink

notes 1 and 2

1

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base breakdown voltage

65

−

V

collector-emitter breakdown voltage

60

−

V

emitter-base breakdown voltage

3

−

V

collector cut-off current

−

2mA

emitter cut-off current

−

0.2

mA

MODE OF

OPERATION

CONDITIONS

f

(GHz)

(V)

(W)

(dB)

η

C

(%)

(

Ω)

Class-C

1.2 to 1,4

50

typ.40; >35

typ.7.8; >7

typ.35; >35

see Fig 4

50

typ.40;

typ.7

typ.35

see Fig 4