LB122T

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR

Pinning

1 = Emitter

2 = Collector

3 = Base

Description

Designed for use in medium power switching

applications.

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

600

V

Collector-Emitter Voltage

400

V

Emitter-Base Voltage

6

V

Collector Current (DC)

800

mA

Collector Current (pulse)

1600

mA

Base Current (DC)

100

mA

Base Current (pulse)

200

mA

20

W

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Voltage

600

-

-

V

µA

Collector-Emitter Breakdown Voltage

400

-

-

V

Emitter-Base Breakdown Voltage

6

-

-

V

µA

Collector Cutoff Current

-

-

10

µA

-

-

10

µA

Emitter Cutoff Current

-

-

10

µA

-

-

0.4

V

-

-

0.8

V

-

-

1

V

10

-

40

-

10

-

-

-

Turn-Off Time

-

-

0.6

µS

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%

Rank

B1

B2

B3

B4

B5

B6

Range

10~17

13~22

18~27

23~32

28~37

33~40

TO-126

Dimensions in inches and (millimeters)

.055(1.39)

.045(1.14)

.032(0.81)

.028(0.71)

.052(1.32)

.048(1.22)

.620(15.75)

.600(15.25)

.279(7.09)

.275(6.99)

.041(1.05)

.037(0.95)

.022

(0.55)

.154(3.91)

.150(3.81)

Typ

.105(2.66)

.095(2.41)

.189(4.80)

.171(4.34)

.304(7.72)

.285(7.52)

.152(3.86)

.138(3.50)

1

2

3