Philips Semiconductors

Preliminary specification

SA3601

Low voltage dual-band RF front-end

1999 Nov 09

6

SYMBOL

PARAMETER

LIMITS

UNITS

SYMBOL

PARAMETER

MIN.

MAX.

UNITS

Supply voltage

–0.3

+4.5

V

Voltage applied to any other pin

–0.3

V

TBD

mW

Maximum junction temperature

150

°C

Power input/output

+20

dBm

DC current into any I/O pin

–10

+10

mA

Storage temperature range

–65

+150

°C

Operating temperature

–40

+85

°C

NOTES:

1. IC is protected for ESD voltages up to 500 V (human body model).

DC ELECTRICAL CHARACTERISTICS

Unless otherwise specified, all Input/Output ports are single-ended.

DC PARAMETERS

SYMBOL

PARAMETER

TEST CONDITIONS

TESTER LIMITS

UNIT

SYMBOL

PARAMETER

PD1

PD2

PD3

MIN

TYP

MAX

UNIT

Sleep mode

0

0

0

0.1

1

µA

Tx mode, LO lowband buffer

0

0

1

4.3

5.5

mA

Rx mode cellular, low gain

0

1

0

10.1

12

mA

Rx mode cellular, high gain

0

1

1

14

16.5

mA

Rx mode PCS, low gain, x2

1

0

0

17.5

21

mA

Rx mode PCS, high gain, x2

1

0

1

23.5

28

mA

Rx mode PCS, low gain, no x2

1

1

0

10

TBD

mA

Rx mode PCS, high gain, no x2

1

1

1

15.5

TBD

mA

Input HIGH voltage

V

Input LOW voltage

–0.3

V

Input bias current

Logic 1 or logic 0

–5

+5

µA