поискавой системы для электроныых деталей |
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SA5219D датащи(PDF) 3 Page - NXP Semiconductors |
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SA5219D датащи(HTML) 3 Page - NXP Semiconductors |
3 / 18 page Philips Semiconductors Product specification SA5219 Wideband variable gain amplifier 1997 Nov 07 3 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNITS VCC Supply voltage -0.5 to +8.0 V PD Power dissipation, TA = 25oC (still air)1 16-Pin Plastic DIP 16-Pin Plastic SO 1450 1100 mW mW TJMAX Maximum operating junction temperature 150 °C TSTG Storage temperature range -65 to +150 °C NOTES: 1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, θJA: 16-Pin DIP: θJA = 85°C/W 16-Pin SO: θJA = 110°C/W RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER RATING UNITS VCC Supply voltage VCC1 = VCC2 = 4.5 to 7.0V V TA Operating ambient temperature range SA Grade -40 to +85 °C TJ Operating junction temperature range SA Grade -40 to +105 °C DC ELECTRICAL CHARACTERISTICS TA = 25oC, VCC1 = VCC2 = +5V, VAGC = 1.0V, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS LIMITS UNIT SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ICC Supply current DC tested 36 43 50 mA AV Voltage gain (single-ended in/single-ended out) DC tested, RL = 10kΩ 16 19 22 dB AV Voltage gain (single-ended in/differential out) DC tested, RL = 10kΩ 22 25 28 dB RIN Input resistance (single-ended) DC tested at ±50µA 0.8 1.2 1.6 k Ω ROUT Output resistance (single-ended) DC tested at ±1mA 35 60 80 Ω VOS Output offset voltage (output referred) +20 ±150 mV VIN DC level on inputs 1.6 2.0 2.4 V VOUT DC level on outputs 1.9 2.4 2.9 V PSRR Output offset supply rejection ratio 18 45 dB VBG Bandgap reference voltage 4.5V<VCC<7V RBG = 10kΩ 1.2 1.32 1.45 V RBG Bandgap loading 2 10 k Ω VAGC AGC DC control voltage range 0-1.3 V IBAGC AGC pin DC bias current 0V<VAGC<1.3V -0.7 -6 µA |
Аналогичный номер детали - SA5219D |
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Аналогичное описание - SA5219D |
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