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IRF5N3205 датащи(PDF) 1 Page - International Rectifier |
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IRF5N3205 датащи(HTML) 1 Page - International Rectifier |
1 / 7 page Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 55* ID @ VGS = 10V, TC = 100°C Continuous Drain Current 55* IDM Pulsed Drain Current À 220 PD @ TC = 25°C Max. Power Dissipation 125 W Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 140 mJ IAR Avalanche Current À 55 A EAR Repetitive Avalanche Energy À 12.5 mJ dv/dt Peak Diode Recovery dv/dt  2.7 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Package Mounting Surface Temp. 300 (for 5s) Weight 2.6 (Typical) g oC A 05/17/05 www.irf.com 1 Product Summary Part Number BVDSS RDS(on) ID IRF5N3205 55V 0.008 Ω 55A* For footnotes refer to the last page HEXFET® POWER MOSFET IRF5N3205 SURFACE MOUNT (SMD-1) 55V, N-CHANNEL Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. Features: n Low RDS(on) n Avalanche Energy Ratings n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Light Weight SMD-1 PD-94302B * Current is limited by package |
Аналогичный номер детали - IRF5N3205 |
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Аналогичное описание - IRF5N3205 |
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