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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF640N датащи(PDF) 4 Page - International Rectifier |
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IRF640N датащи(HTML) 4 Page - International Rectifier |
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4 / 11 page  www.irf.com 4 IRF640N/S/L Fig 7. Typical Source-Drain Diode Forward Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 0.1 1 10 100 1000 0.1 1 10 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 175 C = 25 C ° ° J C V , Drain-to-Source Voltage (V) DS 10us 100us 1ms 10ms Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 0 500 1000 1500 2000 2500 Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 0 20 40 60 80 0 4 8 12 16 20 Q , Total Gate Charge (nC) G I = D 11A V = 40V DS V = 100V DS V = 160V DS 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 25 C J ° T = 175 C J ° |
Аналогичный номер детали - IRF640N |
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Аналогичное описание - IRF640N |
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