поискавой системы для электроныых деталей |
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TDA1010 датащи(PDF) 5 Page - NXP Semiconductors |
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TDA1010 датащи(HTML) 5 Page - NXP Semiconductors |
5 / 22 page November 1982 5 Philips Semiconductors Product specification 6 W audio power amplifier in car applications 10 W audio power amplifier in mains-fed applications TDA1010A D.C. CHARACTERISTICS A.C. CHARACTERISTICS Tamb = 25 °C; VP = 14,4 V; RL = 4 Ω; f = 1 kHz unless otherwise specified; see also Fig.3. Supply voltage range VP 6 to 24 V Repetitive peak output current IORM <3 A Total quiescent current at VP = 14,4 V Itot typ. 31 mA A.F. output power (see Fig.4) at dtot = 10%; measured at pin 2; with bootstrap VP = 14,4 V; RL = 2 Ω (note 1) Po typ. 6,4 W VP = 14,4 V; RL = 4 Ω (note 1 and 2) Po > 5,9 W typ. 6,2 W VP = 14,4 V; RL = 8 Ω (note 1) Po typ. 3,4 W VP = 14,4 V; RL = 4 Ω; without bootstrap Po typ. 5,7 W VP = 14,4 V; RL = 2 Ω; with additional bootstrap resistor of 220 Ω between pins 3 and 4 Po typ. 9 W Voltage gain preamplifier (note 3) Gv1 typ. 24 dB 21 to 27 dB power amplifier Gv2 typ. 30 dB 27 to 33 dB total amplifier Gv tot typ. 54 dB 51 to 57 dB Total harmonic distortion at Po = 1 W dtot typ. 0,2 % Efficiency at Po = 6 W η typ. 75 % Frequency response ( −3 dB) B 80 Hz to 15 kHz Input impedance preamplifier (note 4) Z i typ. 30 k Ω 20 to 40 k Ω power amplifier (note 5) Zi typ. 20 k Ω 14 to 26 k Ω Output impedance of preamplifier; pin 7 (note 5) Zo typ. 20 k Ω 14 to 26 k Ω Output voltage preamplifier (r.m.s. value) dtot < 1% (pin 7) (note 3) Vo(rms) > 0,7 V Noise output voltage (r.m.s. value; note 6) RS = 0 Ω Vn(rms) typ. 0,3 mV RS = 8,2 kΩ Vn(rms) typ. 0,7 mV < 1,4 mV Ripple rejection at f = 1 kHz to 10 kHz (note 7) RR > 42 dB at f = 100 Hz; C2 = 1 µF RR > 37 dB Sensitivity for Po = 5,8 W Vi typ. 10 mV Bootstrap current at onset of clipping; pin 4 (r.m.s. value) I4(rms) typ. 30 mA |
Аналогичный номер детали - TDA1010 |
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Аналогичное описание - TDA1010 |
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