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STP7NK80Z датащи(PDF) 6 Page - STMicroelectronics |
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STP7NK80Z датащи(HTML) 6 Page - STMicroelectronics |
6 / 18 page Electrical characteristics STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1 6/18 Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Source-drain current Source-drain current (pulsed) 5.2 20.8 A A VSD (2) 2. Pulse width limited by safe operating area Forward on voltage ISD = 5.2 A, VGS = 0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5.2 A, di/dt = 100 A/µs VDD = 50 V, Tj = 150°C (see Figure 21) 530 3.31 12.5 ns µC A Table 7. Gate-source zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit BVGSO (1) 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30 V |
Аналогичный номер детали - STP7NK80Z |
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Аналогичное описание - STP7NK80Z |
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