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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF6668PBF датащи(PDF) 1 Page - International Rectifier |
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IRF6668PBF датащи(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 08/28/06 DirectFET Power MOSFET Description The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag- ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6668PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V-60V ETSI input voltage range systems. The IRF6668PbF is also ideal for secondary side synchronous rectification in regulated isolated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters. Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage Typical values (unless otherwise specified) Fig 2. Total Gate Charge vs. Gate-to-Source Voltage DirectFET ISOMETRIC MZ l RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques IRF6668PbF IRF6668TRPbF Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.088mH, RG = 25Ω, IAS = 23A. Notes: SQ SX ST MQ MX MT MZ 4 6 8 10 12 14 16 VGS, Gate -to -Source Voltage (V) 0 10 20 30 40 50 60 ID = 12A TJ = 25°C TJ = 125°C Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f ID @ TC = 70°C Continuous Drain Current, VGS @ 10V f A IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 44 23 Max. 55 170 ±20 80 24 02468 10 12 14 16 18 20 22 24 QG, Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 VDS= 64V VDS= 40V ID= 12A VDSS VGS 80V max ±20V max RDS(on) 12m Ω@ 10V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 22nC 7.8nC 1.6nC 40nC 12nC 4.0V PD - 97232A |
Аналогичный номер детали - IRF6668PBF |
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Аналогичное описание - IRF6668PBF |
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