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FDS8858CZ датащи(PDF) 8 Page - Fairchild Semiconductor |
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FDS8858CZ датащи(HTML) 8 Page - Fairchild Semiconductor |
8 / 10 page Typical Characteristics(Q2 P-Channel)T J = 25 oC unless otherwise noted Figure 21. Gate Charge Characteristics 0 7 14 21 28 35 0 2 4 6 8 10 I D = -7.3A VDD = -20V VDD = -10V -Qg, GATE CHARGE(nC) VDD = -15V 0.1 1 10 100 1000 30 f = 1MHz VGS = 0V Crss Coss Ciss -VDS, DRAIN TO SOURCE VOLTAGE (V) 4000 Figure 22. Capacitance vs Drain to Source Voltage Figure 23. Unclamped Inductive Switching Capability 0.01 0.1 1 10 1 10 TJ = 25oC TJ = 125oC t AV, TIME IN AVALANCHE(ms) 30 20 Figure 24. Gate Leakage Current vs Gate to Source Voltage 0 5 10 15 20 25 30 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 TJ = 25oC TJ = 125oC VDS = 0V -VGS, GATE TO SOURCE VOLTAGE(V) Figure 25 25 50 75 100 125 150 0 2 4 6 8 RθJA = 78 o C/W VGS = -4.5V VGS = -10V T A , AMBIENT TEMPERATURE ( o C ) . Maximum Continuous Drain Current vs Ambient Temperature Figure 26. Forward Bias Safe Operating Area 0.1 1 10 0.01 0.1 1 10 SINGLE PULSE TJ = MAX RATED RθJA = 135 o C/W TA = 25oC THIS AREA IS LIMITED BY r DS(on) 80 60 10s 1ms 10ms 100ms 1s DC -VDS, DRAIN to SOURCE VOLTAGE (V) www.fairchildsemi.com 8 ©2007 Fairchild Semiconductor Corporation FDS8858CZ Rev.B |
Аналогичный номер детали - FDS8858CZ |
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Аналогичное описание - FDS8858CZ |
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