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FDS8858CZ датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS8858CZ датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page March 2007 ©2007 Fairchild Semiconductor Corporation FDS8858CZ Rev.B www.fairchildsemi.com 1 FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET N-Channel: 30V, 8.6A, 17.0m Ω P-Channel: -30V, -7.3A, 20.5mΩ Features Q1: N-Channel Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A Q2: P-Channel Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A High power and handing capability in a widely used surface mount package Fast switching speed General Description These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Application Inverter Synchronous Buck MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Q1 Q2 Units VDS Drain to Source Voltage 30 -30 V VGS Gate to Source Voltage ±20 ±25 V ID Drain Current - Continuous TA = 25°C 8.6 -7.3 A - Pulsed 20 -20 PD Power Dissipation for Dual Operation 2.0 W Power Dissipation for Single Operation TA = 25°C (Note 1a) 1.6 TA = 25°C (Note 1c) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJC Thermal Resistance, Junction to Case (Note 1) 40 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 78 Device Marking Device Package Reel Size Tape Width Quantity FDS8858CZ FDS8858CZ SO-8 13” 12mm 2500 units G2 S2 G1 S1 D2 D2 D1 D1 D1 D2 S1 G1 S2 G2 D1 D2 1 2 3 4 8 7 6 5 Q1 Q2 Pin 1 SO-8 |
Аналогичный номер детали - FDS8858CZ |
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Аналогичное описание - FDS8858CZ |
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