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TSL2550T датащи(PDF) 3 Page - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS |
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TSL2550T датащи(HTML) 3 Page - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS |
3 / 20 page TSL2550 AMBIENT LIGHT SENSOR WITH SMBus INTERFACE TAOS029L − OCTOBER 2007 3 The LUMENOLOGY r Company r r Copyright E 2007, TAOS Inc. www.taosinc.com Electrical Characteristics over recommended operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V SMBus output low voltage IO = 50 μA 0.01 V VOL SMBus output low voltage IO = 4 mA 0.4 V I Supply current Active, VSMBCLK and VSMDATA = VDD, VDD = 3.3 V ± 5% 0.35 0.6 mA IDD Supply current Power down, VSMBCLK and VSMDATA = VDD, VDD = 3.3 V ± 5% 10 μA IIH High level input current VI = VDD 5 μA IIL Low level input current VI = 0 −5 μA Operating Characteristics, VDD = 3.3 V, TA = 255C (unless otherwise noted) (see Notes 2, 3, 4) PARAMETER TEST CONDITIONS CHANNEL MIN TYP MAX UNIT E 0 Ch0 1 Ee = 0 Ch1 1 ADC count value standard mode λp = 640 nm Ch0 639 799 959 counts ADC count value, standard mode λp = 640 nm Ee = 72 μW/cm2 Ch1 85 counts λp = 940 nm Ch0 511 799 1039 λp = 940 nm Ee = 140 μW/cm2 Ch1 703 E 0 Ch0 1 Ee = 0 Ch1 1 ADC count value extended mode λp = 640 nm Ch0 155 counts ADC count value, extended mode λp = 640 nm Ee = 72 μW/cm2 Ch1 16 counts λp = 940 nm Ch0 155 λp = 940 nm Ee = 140 μW/cm2 Ch1 139 ADC count value ratio: Ch1/Ch0, λp = 640 nm, Ee = 72 μW/cm2 0.070 0.106 0.175 ADC count value ratio: Ch1/Ch0, standard mode λp = 940 nm, Ee = 140 μW/cm2 0.70 0.88 1.20 λp = 640 nm Ch0 11.1 R Irradiance responsivity standard mode λp = 640 nm Ee = 72 μW/cm2 Ch1 1.2 counts/ (μW/ Re Irradiance responsivity, standard mode λp = 940 nm Ch0 5.7 (μW/ cm2) λp = 940 nm Ee = 140 μW/cm2 Ch1 5 cm2) Fluorescent light source: 300 Lux Ch0 2.8 R Illuminance responsivity standard mode Fluorescent light source: 300 Lux Ch1 0.23 counts/ Rv Illuminance responsivity, standard mode Incandescent light source: 50 Lux Ch0 19 counts/ lux Incandescent light source: 50 Lux Ch1 13 (Sensor Lux) / (actual Lux), standard mode Fluorescent light source: 300 Lux 0.65 1 1.35 (Sensor Lux) / (actual Lux), standard mode (Note 5) Incandescent light source: 50 Lux 0.5 1 1.5 NOTES: 3. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Visible 640 nm LEDs and infrared 940 nm LEDs are used for final product testing for compatibility with high volume production. 4. The 640 nm irradiance Ee is supplied by an AlInGaP light-emitting diode with the following characteristics: peak wavelength λp = 640 nm and spectral halfwidth Δλ ½ = 17 nm. 5. The 940 nm irradiance Ee is supplied by a GaAs light-emitting diode with the following characteristics: peak wavelength λp = 940 nm and spectral halfwidth Δλ ½ = 40 nm. 6. The sensor Lux is calculated using the empirical formula shown on p. 11 of this data sheet based on measured Ch0 and Ch1 ADC count values for the light source specified. Actual Lux is obtained with a commercial luxmeter. The range of the (sensor Lux) / (actual Lux) ratio is estimated based on the variation of the 640 nm and 940 nm optical parameters. Devices are not 100% tested with fluorescent or incandescent light sources. |
Аналогичный номер детали - TSL2550T |
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Аналогичное описание - TSL2550T |
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