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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRFBE30S датащи(PDF) 2 Page - International Rectifier |
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IRFBE30S датащи(HTML) 2 Page - International Rectifier |
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2 / 6 page  IRFBE30S/IRFBE30L 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). V DD=50V, starting TJ = 25°C, L=29mH, RG=25Ω , IAS = 4.1A. (See Figure 12). I SD ≤ 4.1A, di/dt ≤ 100A/µs, VDD ≤ 600, TJ ≤ 150°C. Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage800 ––– ––– V ∆ΒV DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.90 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– ––– 3.0 Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 2.5 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 100 µA ––– ––– 500 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage––– ––– -100 Qg Total Gate Charge ––– ––– 78 nC Qgs Gate-to-Source Charge––– ––– 9.6 Qgd Gate-to-Drain ("Miller") Charge––– ––– 45 td(on) Turn-On Delay Time ––– 12 ––– tr Rise Time ––– 33 ––– ns td(off) Turn-Off Delay Time ––– 82 ––– tf Fall Time ––– 30 ––– LD Internal Drain Inductance ––– 4.5 ––– nH Between lead, 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 1300 ––– Coss Output Capacitance ––– 310 ––– pF Crss Reverse Transfer Capacitance ––– 190 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 4.1 (Body Diode) A ISM Pulsed Source Current ––– ––– 16 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.8 V trr Reverse Recovery Time ––– 480 720 ns Qrr Reverse Recovery Charge ––– 1.8 2.7 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 2.5A f VDS = VGS, ID = 250µA VDS = 800V, VGS = 0V VDS = 640V, VGS = 0V, TJ = 125°C RG = 12Ω ID = 4.1A VDS = 100V, ID = 2.5A VDD = 400V ID = 4.1A VGS = 20V VGS = -20V TJ = 25°C, IF = 4.1A di/dt = 100A/µs f TJ = 25°C, IS = 4.1A, VGS = 0V f showing the integral reverse p-n junction diode. MOSFET symbol VGS = 0V VDS = 25V Conditions VDS = 400V VGS = 10V, See Fig. 6 & 13 f ƒ = 1.0MHz, See Fig. 5 RD = 95Ω, See Fig. 10 f |
Аналогичный номер детали - IRFBE30S |
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Аналогичное описание - IRFBE30S |
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