поискавой системы для электроныых деталей |
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FM1105 датащи(PDF) 4 Page - Ramtron International Corporation |
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FM1105 датащи(HTML) 4 Page - Ramtron International Corporation |
4 / 8 page FM1105 NV Dual State Saver Rev. 1.1 Aug. 2007 Page 4 of 8 Electrical Specifications Absolute Maximum Ratings Symbol Description Ratings VDD Power Supply Voltage with respect to VSS -1.0V to +7.0V VIN Voltage on any signal pin with respect to VSS -1.0V to +7.0V and VIN < VDD+1.0V TSTG Storage temperature -55 °C to + 125°C TLEAD Lead temperature (Soldering, 10 seconds) 300 ° C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. DC Operating Conditions (TA = -40° C to + 85° C, VDD = 4.5V to 5.5V unless otherwise specified) Symbol Parameter Min Typ Max Units Notes VDD Power Supply Voltage 4.5 5.0 5.5 V ISB Standby Current - 15 µA 1 CPD Power Dissipation Capacitance - 165 pF 2 ILI Input Leakage Current ±1 µA 3 ILO Output Leakage Current ±1 µA 3 VIL Input Low Voltage -0.3 0.3 VDD V VIH Input High Voltage 0.7 VDD VDD + 0.3 V VOH Output High Voltage @ IOH = -1 mA VDD – 0.5 - V VOL Output Low Voltage @ IOL = 1 mA (VDD=4.5V) @ IOL = 10 mA (VDD=4.5V) - - 0.4 0.8 V V VHYS Input Hysteresis (CLK, DN, EN) 0.05 VDD V 4 Notes 1. CLK = VSS, all other inputs at VDD or VSS. 2. To calculate device power dissipation, PD = CPD*VDD2*fi + CL*VDD2*fo, where fi is the input clk freq, fo is the output freq, and CL is the output load capacitance. Active current IDD may be calculated as IDD = CPD*VDD*fi, assuming outputs are floating. 3. VIN or VOUT = VSS to VDD. 4. This parameter is characterized but not tested. |
Аналогичный номер детали - FM1105 |
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Аналогичное описание - FM1105 |
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