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BAP63-05 датащи(PDF) 2 Page - NXP Semiconductors |
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BAP63-05 датащи(HTML) 2 Page - NXP Semiconductors |
2 / 6 page 2000 Feb 17 2 Philips Semiconductors Objective specification Silicon PIN diode BAP63-05 FEATURES • High speed switching for RF signals • Low diode capacitance • Low diode forward resistance • Low series inductance • For applications up to 3 GHz. APPLICATIONS • RF attenuators and switches. DESCRIPTION Two planar PIN diodes in common cathode configuration in a SOT23 small plastic SMD package. PINNING PIN DESCRIPTION 1 anode (a1) 2 anode (a2) 3 common cathode book, 4 columns 21 3 Top view MAM108 21 3 Marking code: Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 50 V IF continuous forward current − 100 mA Ptot total power dissipation Ts =90 °C − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C |
Аналогичный номер детали - BAP63-05 |
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Аналогичное описание - BAP63-05 |
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