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IRFR4104PBF датащи(PDF) 1 Page - International Rectifier

номер детали IRFR4104PBF
подробное описание детали  HEXFET짰 Power MOSFET ( VDSS = 40V , RDS(on) = 5.5m廓 , ID = 42A )
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRFR4104PBF датащи(HTML) 1 Page - International Rectifier

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IRFR4104PbF
IRFU4104PbF
HEXFET® Power MOSFET
VDSS = 40V
RDS(on) = 5.5mΩ
ID = 42A
12/06/04
www.irf.com
1
AUTOMOTIVE MOSFET
PD - 95425A
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
S
D
G
Description
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free
Features
D-Pak
IRFR4104
I-Pak
IRFU4104
HEXFET® is a registered trademark of International Rectifier.
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
™
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited) Single Pulse Avalanche Energyd
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
Ù
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.05
RθJA
Junction-to-Ambient (PCB mount)
i
–––
40
°C/W
RθJA
Junction-to-Ambient
–––
110
310
145
See Fig.12a, 12b, 15, 16
140
0.95
± 20
Max.
119
84
480
42
-55 to + 175
300 (1.6mm from case )
10 lbf
yin (1.1Nym)


Аналогичный номер детали - IRFR4104PBF

производительномер деталидатащиподробное описание детали
logo
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