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BCW31 датащи(PDF) 2 Page - Diotec Semiconductor

номер детали BCW31
подробное описание детали  Surface Mount General Purpose Si-Epi-Planar Transistors
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производитель  DIOTEC [Diotec Semiconductor]
домашняя страница  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BCW31 датащи(HTML) 2 Page - Diotec Semiconductor

  BCW31_07 Datasheet HTML 1Page - Diotec Semiconductor BCW31_07 Datasheet HTML 2Page - Diotec Semiconductor  
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BCW31 ... BCW33
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
VBEsat
750 mV
850 mV
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
IC = 2 mA, VCE = 5 V
VBE
550 mV
700 mV
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 30 V, (E open)
VCE = 30 V, Tj = 100°C, (E open)
ICB0
ICB0
100 nA
10 µA
Emitter-Base cutoff current
VEB = 5 V, (C open)
IEB0
100 nA
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz
CCBO
2.5 pF
6 pF
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
F
10 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 420 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BCW29, BCW30
Marking - Stempelung
BCW31 = D1
BCW32 = D2
BCW33 = D3
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG


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