FEATURES

D TrenchFETr Power MOSFET

D New MICRO FOOTr Chipscale Packaging

Reduces Footprint Area, Profile (0.62 mm) and

On-Resistance Per Footprint Area

D Pin Compatible to Si8401DB

APPLICATIONS

D Load Switch, Battery Switch, and PA Switch for

Portable Devices

Si8409DB

Vishay Siliconix

New Product

Document Number: 73111

S-41816—Rev. A, 11-Oct-04

www.vishay.com

1

P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

−30

−6.3

17

−30

−5.3

17

MICRO FOOT

32

41

S

DD

G

Bump Side View

Backside View

Device Marking: 8409

xxx = Date/Lot Traceability Code

8409

xxx

Ordering Information: Si8409DB-T1—E1

S

G

D

P-Channel MOSFET

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

−30

V

Gate-Source Voltage

"12

V

−6.3

−4.6

−5.1

−3.7

A

Pulsed Drain Current

−25

A

−2.5

−1.3

2.77

1.47

W

1.77

0.94

W

Operating Junction and Storage Temperature Range

−55 to 150

VPR

215

_C

IR/Convection

220

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t v 5 sec

R

35

45

Steady State

72

85

_C/W

Maximum Junction-to-Foot (drain)

Steady State

16

20

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering.