BU931Z

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R214-015,A

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

350

V

Emitter-Base Voltage

5

V

Collector Current (DC)

10

A

Collector Peak Current

15

A

Base Current

1

A

Base Peak Current

5

A

Total Dissipation (Tc = 25 ℃)

125

W

Junction Temperature

+175

℃

Storage Temperature

-65 ~ +175

℃

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector Cut-off Current

100

µA

Emitter Cut-off Current

20

mA

350

500

V

1.6

V

Collector-Emitter Saturation Voltage

1.8

V

2.2

V

Base-Emitter Saturation Voltage

2.4

V

DC Current Gain

300

Diode Forward Voltage

2.5

V

15

µs

Inductive Load Storage Time / Fall Time

L = 7 mH

0.5

µs

Note: 1. Wafer area should be than 50%

2.The quantity of cracked wafers should be less than 10% per shipment.

3.Auerage yield should be more than 50% per wafer, 80% per shipment.

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.