tm

©2007 Fairchild Semiconductor Corporation

FFP15S60S Rev. A

www.fairchildsemi.com

1

October 2007

STEALTH

II Rectifier

TM

FFP15S60S

Features

• High Reverse Voltage and High Reliability

• RoHS compliant

Applications

• General Purpose

• Switching Mode Power Supply

• Boost Diode in continuous mode power factor corrections

• Power switching circuits

characteristics. It is silicon nitride passivated ion-implanted epi-

taxial planar construction.

This device is intended for use as freewheeling of boost diode in

switching power supplies and other power swithching applica-

tions. Their low stored charge and hyperfast soft recovery mini-

mize ringing and electrical noise in many power switching circuits

reducing power loss in the switching transistors.

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Peak Repetitive Reverse Voltage

600

V

Working Peak Reverse Voltage

600

V

DC Blocking Voltage

600

V

Average Rectified Forward Current

15

A

Non-repetitive Peak Surge Current

60Hz Single Half-Sine Wave

150

A

Operating and Storage Temperature Range

-65 to +150

Symbol

Parameter

Ratings

Units

Maximum Thermal Resistance, Junction to Case

1.3

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

F15S60S

FFP15S60STU

TO-220-2L

-

-

50

1. Cathode

2. Anode

1. Cathode

2. Anode

TO-220-2L