поискавой системы для электроныых деталей |
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STB12NM60N датащи(PDF) 5 Page - STMicroelectronics |
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STB12NM60N датащи(HTML) 5 Page - STMicroelectronics |
5 / 18 page STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N Electrical characteristics 5/18 Table 6. Switching times Symbol Parameter Test conditions Min Typ Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300V, ID = 5A, RG = 4.7Ω, VGS = 10V (see Figure 17) 15 9 60 10 ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min Typ Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 10 40 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 10A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD =10A, di/dt =100A/µs, VDD = 100V, Tj = 25°C (see Figure 19) 360 3.5 20 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current VDD = 100V di/dt =100A/µs, ISD = 10A Tj = 150°C (see Figure 19) 530 5.20 20 ns µC A |
Аналогичный номер детали - STB12NM60N |
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Аналогичное описание - STB12NM60N |
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