Ultrafast Recovery Diode

FMXA-1106S

November, 2005

D01-002EA-051128

Die Structure: Silicon Planer Diode (FRD)

§1. Absolute Maximum Ratings and Electrical Characteristics

•Absolute Maximum Ratings

No.

Item

Symbol

Unit

Rating

Conditions

1

Transient Peak Reverse Voltage

VRSM

V

600

2

Peak Reverse Voltage

VRM

V

600

3

Average Forward Current

IF(AV)

A

10

4

Peak Surge Forward Current

IFSM

A

100

10msec. Half sine-wave, one shot

5

I

I

A

50

1msec

6

Junction Temperature

Tj

°C

-40 to +150

7

Storage Temperature

Tstg

°C

-40 to+150

• Electrical Characteristics

No.

Item

Symbol

Unit

Rating

Conditions

1

Forward Voltage Drop

V

1.98 max.

IF=10A

2

Reverse Leakage Current

µA

100 max.

VR=VRM

3

Reverse Leakage Current Under

High Temperature

mA

30 max.

VR=VRM, Tj=150°C

4

Reverse Recovery Time

trr

ns

28 max

IF=IRP=500mA

90% Recovery point

5

Thermal Resistance

°C/W

4.0 max.

Between Junction and case

2/8