2SA1283 datasheet(1/1 Pages) TEL

номер детали	2SA1283

подробное описание детали	Plastic-Encapsulated Transistors

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производитель	TEL [TRANSYS Electronics Limited]

домашняя страница	http://www.transyselectronics.com

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TO-92MOD Plastic-Encapsulated Transistors

2SA1283

TRANSISTOR (PNP)

FEATURE

Power dissipation

PCM : 0.9

W (Tamb=25

℃)

Collector current

ICM :

-1

A

Collector-base voltage

V(BR)CBO : -60

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= -10

µA , I

E=0

-60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-2mA , IB=0

-60

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -10µA, IC=0

-6

V

Collector cut-off current

ICBO

VCB= -50 V, IE=0

-0.2

µA

Emitter cut-off current

IEBO

VEB= -4 V, IC=0

-0.2

µA

DC current gain

hFE

VCE=-4 V, IC= -100mA

55

300

Collector-emitter saturation voltage

VCEsat

IC= -500 mA, IB=-25 mA

-0.3

V

Transition frequency

f T

VCE=-2V, IC= -10mA

50

MHz

Output capacitance

Cob

VCE=-10V, IE=0,f=1 MHz

25

pF

CLASSIFICATION OF hFE

Rank

C

D

E

Range

55-110

90-180

150-300

TO-92MOD

1. EMITTER

2. COLLECTOR

3. BASE

123

Transys

Electronics

LI M ITE D

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