2SC1213 datasheet(1/1 Pages) TEL

номер детали	2SC1213

подробное описание детали	Plastic-Encapsulated Transistors

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производитель	TEL [TRANSYS Electronics Limited]

домашняя страница	http://www.transyselectronics.com

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TO-92 Plastic-Encapsulated Transistors

2SC1213

TRANSISTOR (NPN)

2SC1213A

FEATURE

Power dissipation

PCM:

0.4

W (Tamb=25

℃)

Collector current

ICM:

0.5

A

Collector-base voltage

V(BR)CBO:

2SC1213 :

35

V

2SC1213A :

50

V

Operating and storage junction temperature range

TJ, Tstg:

-55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS(Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

2SC1213

2SC1213A

V(BR)CBO

Ic= 10

µA , I

E=0

35

50

V

Collector-emitter breakdown voltage 2SC1213

2SC1213A

V(BR)CEO

IC= 1 mA , IB=0

35

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10µA, IC=0

4

V

Collector cut-off current

ICBO

VCB= 20V , IE=0

0.5

µA

hFE(1)

VCE=3V, IC= 10mA

60

320

DC current gain

hFE(2)

VCE=3V, IC= 500mA

10

Collector-emitter saturation voltage

VCE(sat)

IC= 150mA, IB= 15 mA

0.2

0.6

V

Base-emitter voltage

VBE

VCE= 3V, IC= 10 mA

0.75

V

CLASSIFICATION OF hFE(1)

Rank

B

C

D

Range

60-120

100-200

160-320

1 2 3

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

Transys

Electronics

LI M ITE D

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Аналогичный номер детали - 2SC1213

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