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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2N1711 датащи(PDF) 2 Page - STMicroelectronics |
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2N1711 датащи(HTML) 2 Page - STMicroelectronics |
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2 / 4 page  THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-Case Max Thermal Resistance Junction-Ambient Max 50 187.5 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 60 V VCB = 60 V TC = 150 oC 10 10 nA µA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 5 nA V(BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = 100 µA 75 V V(BR)CER ∗ Collector-Emitter Breakdown Voltage (RBE ≤ 10Ω) IC = 10 mA 50 V V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = 100 µA 7V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 150 mA IB = 15 mA 0.5 1.5 V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 150 mA IB = 15 mA 0.95 1.3 V hFE ∗ DC Current Gain IC = 10 µA VCE = 10 V IC = 0.1 mA VCE = 10 V IC = 10 mA VCE = 10 V IC = 150 mA VCE = 10 V IC = 500 mA VCE = 10 V IC = 10 mA VCE = 10 V TC = -55 oC 20 35 75 100 40 35 60 80 130 130 75 65 300 hfe Small Signal Current Gain IC = 1 mA VCE = 10 V f = 1 KHz 70 135 300 fT Transition Frequency IC = 50 mA VCE = 10 V f = 20 MHz 70 100 MHz CEBO Emitter-Base Capacitance IC = 0 VEB = 0.5 V f = 1 MHz 50 80 pF CCBO Collector-Base Capacitance IE = 0 VCB = 10 V f = 1 MHz 18 25 pF NF Noise Figure IC = 0.3 mA VCE = 10 V Rg = 510 Ω f = 1 KHz 3.5 8 dB hie Input Impedance IC = 1 mA VCE = 5 V f = 1 KHz 4.4 K Ω hre Reverse Voltage Ratio IC = 1 mA VCE = 5 V f = 1 KHz 7.3 x 10 -4 hoe Output Admittance IC = 1 mA VCE = 5 V f = 1 KHz 23.8 µS ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % 2N1711 2/4 |
Аналогичный номер детали - 2N1711 |
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Аналогичное описание - 2N1711 |
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