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TPCS8303 датащи(PDF) 5 Page - Toshiba Semiconductor

номер детали TPCS8303
подробное описание детали  Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCS8303 датащи(HTML) 5 Page - Toshiba Semiconductor

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TPCS8303
2006-11-16
5
30
40
010
20
Ambient temperature Ta (°C)
RDS (ON) – Ta
Drain
−source voltage VDS (V)
IDR – VDS
Drain
−source voltage VDS (V)
Capacitance – VDS
Ambient temperature Ta (°C)
Vth – Ta
Ambient temperature Ta (°C)
PD – Ta
Total gate charge Qg (nC)
Dynamic input/output
characteristics
Common source
Pulse test
0
10
20
30
40
50
60
−80
−40
0
40
80
120
160
VGS = −2 V
VGS = −2.5 V
VGS = −4.5 V
ID = −5 A
−2.5
−1.3
Common source
Ta
= 25°C
Pulse test
0
0.2
0.4
0.6
0.8
1.0
1.2
−0.1
−100
−1
−10 −10 V
−5
−3
VGS = 0 V
Common source
Ta
= 25°C
VGS = 0 V
f
= 1 MHz
Ciss
Coss
Crss
100
1000
10000
10
30
300
3000
−0.1
−1
−10
−100
−0.3
−3
−30
−80
−40
0
40
80
160
120
Common source
VDS = −10 V
ID = −200 μA
Pulse test
0
−1.2
−1.0
−0.2
(1)
(4)
(3)
(2)
0
0.25
0.5
0.75
1.0
1.25
0
40
80
160
120
200
−4
Common source
ID = −5 A
Ta
= 25°C, Pulse test
0
−2.5
−5
−7.5
−10
VDD = −16 V
0
−5
−10
−15
−20
VDS
−8
VDD = −16 V
VGS
ID = −5 A, −2.5 A, −1.3 A
−1
−4
−8
−0.6
−0.8
−0.4
Device mounted on a glass-epoxy
board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation
(Note 3b)
Device mounted on a glass-epoxy
board (b)
(Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual
operation
(Note 3b)
t
= 10 s


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