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2SC3112 датащи(PDF) 1 Page - Toshiba Semiconductor

номер детали 2SC3112
подробное описание детали  Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3112 датащи(HTML) 1 Page - Toshiba Semiconductor

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2SC3112
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3112
For Audio Amplifier and Switching Applications
• High DC current gain: hFE = 600~3600
• High breakdown voltage: VCEO = 50 V
• High collector current: IC = 150 mA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
DC current gain
hFE
(Note)
VCE = 6 V, IC = 2 mA
600
3600
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.12
0.25
V
Transition frequency
fT
VCE = 10 V, IC = 10 mA
100
250
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
3.5
pF
NF (1)
VCE = 6 V, IC = 0.1 mA, f = 100 Hz,
RG = 10 kΩ
0.5
Noise figure
NF (2)
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
RG = 10 kΩ
0.3
dB
Note: hFE classification A: 600~1800, B: 1200~3600
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)


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