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2SC3279 датащи(PDF) 1 Page - Toshiba Semiconductor

номер детали 2SC3279
подробное описание детали  Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3279 датащи(HTML) 1 Page - Toshiba Semiconductor

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2SC3279
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3279
Strobe Flash Applications
Medium Power Amplifier Applications
• High DC current gain and excellent hFE linearity
: hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)
• Low saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 2 A, IB = 50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
VCES
30
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
6
V
DC
IC
2
Collector current
Pulsed
(Note 1)
ICP
5
A
Base current
IB
0.2
A
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width
= 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 30 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
10
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 1 mA, IC = 0
6
V
hFE (1)
(Note 2)
VCE = 1 V, IC = 0.5 A
140
600
DC current gain
hFE (2)
VCE = 1 V, IC = 2 A
70
200
Collector-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 50 mA
0.2
0.5
V
Base-emitter voltage
VBE
VCE = 1 V, IC = 2 A
0.86
1.5
V
Transition frequency
fT
VCE = 1 V, IC = 0.5 A
150
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
27
pF
Note 2: hFE (1) classification L: 140~240, M: 200~330, N: 300~450, P: 420~600
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)


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