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2SC2500 датащи(PDF) 1 Page - Toshiba Semiconductor |
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2SC2500 датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SC2500 2006-11-09 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2500 Strobe Flash Applications Medium-Power Amplifier Applications • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V VCES 30 Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 6 V DC IC 2 Collector current Pulsed (Note 1) ICP 5 A Base current IB 0.5 A Collector power dissipation PC 900 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) |
Аналогичный номер детали - 2SC2500_06 |
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Аналогичное описание - 2SC2500_06 |
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